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| FJP5355 FJP5355 High Voltage Switch Mode Application * * * * High Speed Switching Very Low Switching Losses Very Low Operating Temperature Wide RBSOA 1 TO-220 2.Collector 3.Emitter 1.Base NPN Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25C) Junction Temperature Storage Temperature Value 900 440 14.5 5 7.5 2.5 50 150 - 65 ~ 150 Units V V V A A A W C C Electrical Characteristics TC=25C unless otherwise noted Symbol BVCBO BVCEO BVEBO IEBO hFE Parameter Collector- Base Breakdown Voltage Collector- Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Emitter Cut-off Current *DC Current Gain Test Condition IC = 500A, IE = 0 IC = 5mA, IB = 0 IE = 500A, IC = 0 VEB = 12V, IC = 0 VCE = 2V, IC = 10mA VCE = 2V, IC = 0.8A VCE = 2V, IC = 2.5A IC = 0.8A, IB = 0.2A IC = 2.5A, IB = 0.8A IC = 0.8A, IB = 0.2A IC = 2.5A, IB = 0.8A VCE = 10V, IC = 0.2A VCC = 125V, IC = 0.5A IB1 = 45mA, -IB2 = 0.5A PW=300s 4 1.1 1.2 0.4 15 15 7 0.2 0.4 1.0 1.2 V V V V MHz s s s Min. 900 440 14.5 1 Typ. Max. Units V V V A VCE(sat) VBE (sat) fT tON tSTG tF *Collector-Emitter Saturation Voltage *Base-Emitter Saturation Voltage Current Gain Bandwidth Product Turn On Time Storage Time Fall Time * Pulse test: PW300s, Duty cycle2% (c)2003 Fairchild Semiconductor Corporation Rev. A, September 2003 FJP5355 Typical Characteristics 5 1000 VCE = 5V IC [A], COLLECTOR CURRENT 4 hFE, DC CURREMT GAIN IB=600mA 100 T C = 75 C TC = 125 C o o 3 IB =300mA 2 IB=200mA IB =100mA TC = - 40 C 10 o T C = 25 C o 1 0 0 1 2 3 4 5 1 1m 10m 100m 1 10 VCE [V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC Current Gain 10 10 VCE(sat) [V], SATURATION VOLTAGE 1 T C = 75 C o VBE(sat) [V], SATURATION VOLTAGE IC = 4 IB IC = 4 IB 1 T C = - 40 C o TC = 25 C o T C = 125 C 0.1 o o T C = 25 C o TC = - 40 C T C = 125 C o TC = 75 C o 0.01 1m 10m 100m 1 10 0.1 1m 10m 100m 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 3. Saturation Voltage Figure 4. Saturation Voltage 1000 60 PC[W], COLLECTOR POWER DISSIPATION 50 tSTG & tF [ns], Switching Time tSTG 40 100 30 20 tF I B1=45mA, I B2=-500mA V CC=125V,PW=300us 10 0.3 1 10 0 0 25 50 75 100 125 150 175 4 IC [A], COLLECTOR CURRENT TC[ C], CASE TEMPERATURE o Figure 5. Resistive Load Switching Figure 6. Power Derating Curve (c)2003 Fairchild Semiconductor Corporation Rev. A, September 2003 FJP5355 Typical Characteristics (Continued) 6 100 IC [A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT 5 10 ICP (max) IC(max) DC 10ms 1ms 4 500s 1 3 0.1 2 IB1=1A, R B2=0 L=1mH, V CC=50V 1 10 100 1000 0.01 1 10 100 1000 VCE [V], COLLECTOR-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 7. Reverse Biased Safe Operating Area Figure 8. Forward Biased Safe Operating Area (c)2003 Fairchild Semiconductor Corporation Rev. A, September 2003 FJP5355 Package Dimensions TO-220 9.90 0.20 1.30 0.10 2.80 0.10 4.50 0.20 (8.70) o3.60 0.10 (1.70) 1.30 -0.05 +0.10 9.20 0.20 (1.46) 13.08 0.20 (1.00) (3.00) 15.90 0.20 1.27 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20] 10.08 0.30 18.95MAX. (3.70) (45 ) 0.50 -0.05 +0.10 2.40 0.20 10.00 0.20 Dimensions in Millimeters (c)2003 Fairchild Semiconductor Corporation Rev. A, September 2003 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACT Quiet SeriesTM ActiveArrayTM FAST(R) FASTrTM BottomlessTM FRFETTM CoolFETTM CROSSVOLTTM GlobalOptoisolatorTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM EnSignaTM ImpliedDisconnectTM FACTTM ISOPLANARTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2003 Fairchild Semiconductor Corporation Rev. I5 |
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